(China (Mainland))
Product Summary
The STY60NM60 is a Zener-Protected MDmesh Power MOSFET. It associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The STY60NM60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The STY60NM60 is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Parametrics
STY60NM60 absolute maximum ratings: (1)Drain-source Voltage (VGS =0):600 V; (2)Drain-gate Voltage (RGS =20kΩ):600 V; (3)Gate- source Voltage:±30 V; (4)Drain Current (continuous) at TC = 25℃:60 A; (5)Drain Current (continuous) at TC = 100℃:37.8 A; (6)Drain Current (pulsed):240 A; (7)Total Dissipation at TC = 25℃:560 W; (8)Gate source ESD(HBM-C=100pF, R=15KΩ):6KV; (9)Derating Factor:4.5 W/℃; (10)Peak Diode Recovery voltage slope:15 V/ns; (11)Storage Temperature:–65℃ to 150℃; (12)Max. Operating Junction Temperature:150℃.
Features
STY60NM60 features: (1)typical RDS(on) = 0.050Ω; (2)high dv/dt and avalanche capabilities; (3)improved esd capability; (4)low input capacitance and gate charge; (5)low gate input resistance; (6)tight process control; (7)industry’s lowest on-resistance.
Diagrams
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 STY60NM60 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 60 Amp |
Data Sheet |
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STY60NA20 |
Other |
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Data Sheet |
Negotiable |
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MOSFET N-Ch 300 Volt 60 Amp Zener SuperMESH3 |
Data Sheet |
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STY60NM50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 60 Amp |
Data Sheet |
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STY60NM60 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 60 Amp |
Data Sheet |
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