Product Summary

The RC28F256P30B85 Intel StrataFlash Embedded Memory (P30) product is the latest generation of Intel StrataFlash memory devices. Offered in 64-Mbit up through 1-Gbit densities, the RC28F256P30B85 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features of RC28F256P30B85 include high-performance synchronousburst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.

Parametrics

RC28F256P30B85 absolute maximum ratings: (1)Temperature under bias: –40 ℃ to +85 ℃; (2)Storage temperature: –65 ℃ to +125 ℃; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.

Features

RC28F256P30B85 features: (1)High performance: 85/88 ns initial access, 40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode, 25 ns asynchronous-page read mode, 4-, 8-, 16-, and continuous-word burst mode, Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ), 1.8 V buffered programming at 7 μs/byte (Typ); (2)Architecture: Multi-Level Cell Technology: Highest Density; (3)at Lowest Cost, Asymmetrically-blocked architecture, Four 32-KByte parameter blocks: top or bottom configuration, 128-KByte main blocks; (4)Voltage and Power: VCC (core) voltage: 1.7 V – 2.0 V, VCCQ (I/O) voltage: 1.7 V – 3.6 V, Standby current: 55 μA (Typ) for 256-Mbit, 4-Word synchronous read current: 13 mA (Typ) at 40 MHz.

Diagrams

RC28F256P30B85 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
RC28F256P30B85A
RC28F256P30B85A

IC FLASH 256MBIT 85NS 64EZBGA
Data Sheet
Negotiable 
RC28F256P30B85D
RC28F256P30B85D

IC FLASH 256MBIT 85NS 64EZBGA
Data Sheet
Negotiable