Product Summary

The 2N2608 is a P-channel J-FET.

Parametrics

2N2608 absolute maximum ratings: (1)Gate-Source Voltage, VGSS: 30V; (2)Power Dissipation, PD: 300mW; (3)Operating Junction & Storage Temperature Range, Top, Tstg: -65 to +200℃.

Features

2N2608 features: (1)Gate-Source Breakdown Voltage, V(BR)GSS: 30Vdc min; (2)Gate Reverse Current, IGSS: 10Adc max; (3)Drain Current, IDDSS:-1.0mAdc; (4)Gate-Source Cutoff Voltage, VGS(off): 0.75Vdc.

Diagrams

2N2608 diagram

2N2609
2N2609

Central Semiconductor

JFET P-Ch Junc FET

Data Sheet

Negotiable 
2N2646
2N2646

Central Semiconductor

Transistors Bipolar (BJT) Silicon Unijuction

Data Sheet

Negotiable 
2N2647
2N2647

Central Semiconductor

Transistors Bipolar (BJT) PNP Unijunction

Data Sheet

0-500: $2.89
500-1000: $2.75
1000-2000: $2.68
2N2696
2N2696

Other


Data Sheet

Negotiable